1. Material Scientific Research and Structural Honesty
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms arranged in a tetrahedral latticework, mainly in hexagonal (4H, 6H) or cubic (3C) polytypes, each displaying remarkable atomic bond strength.
The Si– C bond, with a bond energy of approximately 318 kJ/mol, is among the greatest in architectural porcelains, conferring impressive thermal stability, hardness, and resistance to chemical strike.
This robust covalent network leads to a material with a melting factor exceeding 2700 ° C(sublimes), making it among the most refractory non-oxide porcelains available for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC preserves mechanical strength and creep resistance at temperatures above 1400 ° C, where lots of metals and traditional porcelains begin to soften or deteriorate.
Its reduced coefficient of thermal development (~ 4.0 × 10 ⁻⁶/ K) incorporated with high thermal conductivity (80– 120 W/(m · K)) allows quick thermal biking without devastating cracking, a crucial characteristic for crucible efficiency.
These intrinsic residential or commercial properties originate from the well balanced electronegativity and comparable atomic dimensions of silicon and carbon, which promote an extremely stable and densely loaded crystal structure.
1.2 Microstructure and Mechanical Strength
Silicon carbide crucibles are generally fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a decisive duty in sturdiness and thermal shock resistance.
Sintered SiC crucibles are produced via solid-state or liquid-phase sintering at temperatures over 2000 ° C, usually with boron or carbon ingredients to improve densification and grain limit communication.
This procedure yields a fully dense, fine-grained structure with minimal porosity (
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